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| savantic semiconductor product specification silicon npn power transistors BU1508AF d escription with to-220fa package high voltage high speed switching applications for use in horizontal deflection circuits of colour tv receivers. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1200 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 7.5 v i c collector current 8 a i cm collector current (peak) 15 a i b base current 4 a i bm base current (peak) 6 a p t total power dissipation t c =25 35 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-220fa) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors BU1508AF c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7.5 13.5 v v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0;l=25mh 700 v v cesat collector-emitter saturation voltage i c =4.5a; i b =1.1a 1.0 v v besat base-emitter saturation voltage i c =4.5a; i b =1.7a 1.1 v i ces collector cut-off current v ce =rated;v be =0 t j =125 1.0 2.0 ma i ebo emitter cut-off current v eb =7.5v; i c =0 1.0 ma h fe-1 dc current gain i c =0.1a ; v ce =5v 13 h fe-2 dc current gain i c =4.5a ; v ce =1v 4.0 5.5 7.0 c c collector output capacitance i e =0;f=1mhz;v cb =10v 80 pf downloaded from: http:/// savantic semiconductor product specification 3 silicon npn power transistors BU1508AF package outline fig.2 outline dimensions downloaded from: http:/// |
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